US Patent Issued to HRL Laboratories on Dec. 16 for "Semiconductor materials and devices including iii-nitride layers integrated with scandium aluminum nitride" (California Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,642, issued on Dec. 16, was assigned to HRL Laboratories LLC (Malibu, Calif.).

"Semiconductor materials and devices including iii-nitride layers integrated with scandium aluminum nitride" was invented by Fevzi Arkun (Camarillo, Calif.), Hasan Sharifi (Agoura Hills, Calif.) and Samuel Whiteley (Santa Monica, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ScxAl1-xN based filter may include a ScxAl1-xN material formed directly on a III-N material. The III-N material may include an n-type III-N layer or a III-N heterostructure having a 2DEG therein. The ScxAl1-xN based filter may be monolithically integrated with a III-N device such as a HEMT d...