US Patent Issued to HOYA on Nov. 11 for "Mask blank, method of manufacturing transfer mask, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,468,217, issued on Nov. 11, was assigned to HOYA Corp. (Tokyo).

"Mask blank, method of manufacturing transfer mask, and method of manufacturing semiconductor device" was invented by Hiroaki Shishido (Tokyo) and Osamu Nozawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a mask blank.The mask blank has a structure where a thin film for pattern formation, a first hard mask film, and a second hard mask film are stacked in this order on a main surface of a substrate, the thin film for pattern formation contains a transition metal, the first hard mask film contains oxygen and one or more elements selected from silicon and tantalum, the sec...