US Patent Issued to Hosin Global Electronics on July 22 for "Memory control method and storage device" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,139, issued on July 22, was assigned to Hosin Global Electronics Co. LTD (Shenzhen, China).

"Memory control method and storage device" was invented by Xiao Min Chen (Shenzhen, China), Tsung-Lin Wu (Hsinchu, Taiwan), Chao-Yu Chen (Shenzhen, China), Qi Ming Zhu (Shenzhen, China), Wu Du (Shenzhen, China), Kai Qiang Meng (Shenzhen, China), Hai Liang Wu (Shenzhen, China), Jie Zhang (Shenzhen, China) and Wei Wang (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory control method and a storage device. The storage device includes a memory controller and a memory module. The storage device is electrically connected to a hos...