ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,426, issued on Nov. 11, was assigned to HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION (Asan-si, South Korea).

"Scan drive circuit insensitive to variations in transistor characteristics" was invented by Byung-Seong Bae (Suwon-si, South Korea), Hyuck-Su Lee (Incheon, South Korea) and Seo-Jin Kang (Siheung-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a scan drive circuit and, more specifically, to a scan drive circuit that is insensitive to changes in the characteristics of transistors, enabling stable operation even when such changes occur within a certain range. Accordingly, the scan drive circui...