US Patent Issued to Hong Kong Applied Science and Technology Research Institute on May 20 for "Silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with short circuit protection" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,048, issued on May 20, was assigned to Hong Kong Applied Science and Technology Research Institute Co. Ltd. (Hong Kong, Hong Kong).

"Silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with short circuit protection" was invented by Shu Kin Yau (Hong Kong, Hong Kong), Chenyue Ma (Hong Kong, Hong Kong) and Siu Wai Wong (Hong Kong, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated MOSFET-JFET device made from a Silicon-Carbide (SiC) wafer has N+ source, P body diode, and upper N regions that form vertical MOSFETs on the sidewalls of polysilicon gates. An N substrate under the upper N region forms a drif...