US Patent Issued to Honeywell International on Oct. 7 for "Magneto resistive memory for monolithic data processing" (Minnesota Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,791, issued on Oct. 7, was assigned to Honeywell International Inc. (Charlotte, N.C.).

"Magneto resistive memory for monolithic data processing" was invented by Romney R. Katti (Shorewood, Minn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example apparatus includes a single die, the single die including a first set of one or more magnetic tunnel junction (MTJ) elements comprising a first anisotropy that results in the first set of one or more magnetic tunnel junction elements being configured to perform a write operation at a first write speed. The single die further includes a second set of one or more MTJ elements comprising a second anisotro...