US Patent Issued to Honeywell International on July 29 for "Method for applying a cap layer to protect electrical components of a semiconductor device from e-beam irradiation" (Texas Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,553, issued on July 29, was assigned to Honeywell International Inc. (Charlotte, N.C.).

"Method for applying a cap layer to protect electrical components of a semiconductor device from e-beam irradiation" was invented by Yong-Fa Alan Wang (McKinney, Texas) and Thuy-Doan Pham (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method for protecting an electrical component on a semiconductor device when subjected to exposure to highly energized electrons, such as those emitted during e-beam irradiation, is provided. An example method may include doping one or more lead-out regions providing an electrical connection to the electr...