US Patent Issued to Honeywell Federal Manufacturing & Technologies on Jan. 20 for "Multi-die semiconductor wafer using silicon wafer substrate embedment" (Missouri Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,791, issued on Jan. 20, was assigned to Honeywell Federal Manufacturing & Technologies LLC (Kansas City, Mo.).

"Multi-die semiconductor wafer using silicon wafer substrate embedment" was invented by Barbara Diane Young (Raymore, Mo.) and Steven James Sedlock (Raymore, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor wafer may etch a surface of a silicon substrate to form a first cavity and a second cavity. The method may apply a first dielectric layer to the surface of the silicon substrate, the first cavity, and the second cavity. The method may affix a first die into the first cavity of the silicon substr...