US Patent Issued to Honda Motor on Dec. 30 for "Process for growth of atomic layer transition metal dichalcogenides" (California Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,509,796, issued on Dec. 30, was assigned to Honda Motor Co. Ltd. (Tokyo).

"Process for growth of atomic layer transition metal dichalcogenides" was invented by Xufan Li (Fremont, Calif.) and Avetik Harutyunyan (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to processes for forming a two-dimensional single atomic layer transition metal dichalcogenide (TMD). The present disclosure also generally relates to a two-dimensional single atomic layer TMD formed by the process. In an embodiment, a process for forming a continuous TMD film is provided. The process includes flowing a carrier gas into a p...