ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,605, issued on Dec. 9, was assigned to Hon Young Semiconductor Corp. (Hsinchu, Taiwan).
"Power semiconductor device" was invented by Yan-Ru Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a substrate, an epitaxy layer, a source electrode, and a first metal layer. The substrate includes an active region, a buffer region, and a termination region. The buffer region surrounds the active region, and the termination region surrounds the active region. The epitaxy layer is located on the substrate. The epitaxy layer is located in the active region, the buffer region, and the termination region. The...