US Patent Issued to Hithium Tech HK Lmited on July 8 for "Carbon-silicon three-dimensional structural composite material and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,355,067, issued on July 8, was assigned to Hithium Tech HK Lmited (HongKong, China).

"Carbon-silicon three-dimensional structural composite material and preparation method thereof" was invented by Xuelian Wu (Fujian, China) and Enqiang Zhang (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a carbon-silicon three-dimensional structural composite material and a preparation method thereof. The preparation method includes: dissolving graphene quantum dots in ultrapure water, dropwise adding a CuCl2 or ZnCl2 solution, and performing oscillation to generate a mixed emulsifier; mixing the mixed emulsifier with a graphite oxide aqueous ...