ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,115, issued on Oct. 7, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).
"Power semiconductor module" was invented by Toru Masuda (Tokyo), Seiichi Hayakawa (Hitachi, Japan) and Yuji Takayanagi (Hitachi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a power semiconductor module with multiple semiconductor chips arranged in parallel on an insulated substrate, allowing for high density mounting of semiconductor chips and highly reliable with less difference in operating characteristics from one semiconductor chip to another. The above module includes an insulated substrate; a first conductive pattern laid...