ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,121, issued on Oct. 21, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).
"Semiconductor device" was invented by Koyo Kinoshita (Hitachi, Japan), Takahiro Morikawa (Hitachi, Japan), Tatsunori Murata (Hitachi, Japan) and Kan Yasui (Hitachi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device where an electric field applied to an electric field protection layer at a bottom of a trench gate electrode of an active region is relaxed and an avalanche withstand voltage is improved. The semiconductor device includes: an active region that has multiple gate trenches, a trench gate electrode in each ...