US Patent Issued to HITACHI POWER SEMICONDUCTOR DEVICE on May 27 for "Method for manufacturing semiconductor device, semiconductor device, semiconductor module, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,728, issued on May 27, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).

"Method for manufacturing semiconductor device, semiconductor device, semiconductor module, and power conversion device" was invented by Tomoyasu Furukawa (Tokyo) and Tsubasa Moritsuka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on...