US Patent Issued to HITACHI POWER SEMICONDUCTOR DEVICE on May 13 for "Semiconductor device and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,716, issued on May 13, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).

"Semiconductor device and power conversion device" was invented by Tomoyasu Furukawa (Tokyo), Masaki Shiraishi (Tokyo), So Watanabe (Tokyo), Tomoyuki Miyoshi (Tokyo) and Yujiro Takeuchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a high cutoff resistance capable of suppressing local current/electric field concentration and current concentration at a chip termination portion due to an electric field variation between IGBT cells due to a shape variation and impurity variation during manufacturing. The semiconductor d...