ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,808, issued on June 10, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).
"Semiconductor device" was invented by Naoki Takeda (Tokyo), Hisashi Tanie (Tokyo), Kisho Ashida (Tokyo), Yu Harubeppu (Tokyo), Tomohiro Onda (Hitachi, Japan) and Masato Nakamura (Hitachi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate el...