US Patent Issued to HITACHI POWER SEMICONDUCTOR DEVICE on July 22 for "Trenched gate double diffused semiconductor device with channel impurity concentration adjustment region" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,349, issued on July 22, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).

"Trenched gate double diffused semiconductor device with channel impurity concentration adjustment region" was invented by Takeru Suto (Tokyo), Naoki Watanabe (Tokyo), Tomoka Suematsu (Tokyo) and Hiroshi Miki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In the present invention, in a FinFET having a channel forming region on a surface of a fin that is a semiconductor layer protruding on an upper surface of a substrate, a channel at a corner of the fin is prevented from becoming an ON state with a low voltage and a steep ON/OFF operation is made...