US Patent Issued to HITACHI on Nov. 25 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,267, issued on Nov. 25, was assigned to HITACHI LTD. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Naoki Watanabe (Tokyo) and Yuan Bu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "To realize a highly reliable IGBT that suppresses the bipolar degradation by preventing the occurrence of a defect on a boundary between a contact region and a silicide layer. As a means to realize the above, a semiconductor device includes: a collector region that is formed on a lower surface of a semiconductor substrate and forms an IGBT; and a collector electrode that is formed on a lower surface of the collecto...