ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,766, issued on Nov. 11, was assigned to Hitachi Ltd. (Tokyo).
"Power semiconductor device" was invented by Ti Chen (Tokyo), Takeshi Tokuyama (Tokyo), Akihiro Namba (Tokyo), Takahiro Araki (Tokyo) and Masanori Sawahata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device according to the present invention is provided with a conductive section, a circuit component, a substrate that supports the conductive section and the circuit component, and a sealing member, wherein the sealing member forms a first flow path, and the first flow path has a first region thermally connected to a power circuit and a second region thermally...