ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,849, issued on Jan. 27, was assigned to HITACHI LTD. (Tokyo).
"Power semiconductor device and power conversion device" was invented by Ti Chen (Tokyo), Akihiro Namba (Tokyo), Takeshi Tokuyama (Tokyo), Takahiro Araki (Tokyo) and Kyota Asai (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device according to the present invention is provided with: a first circuit body constituting an upper arm of an inverter circuit for converting a DC current into an AC current; a second circuit body constituting a lower arm of the inverter circuit; and a circuit board that has therein a through-hole in which the first circuit body and the ...