US Patent Issued to Hitachi on Aug. 19 for "Semiconductor device comprising plurality of diffusion layer electrodes with different conductivities and gate electrodes" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,374, issued on Aug. 19, was assigned to Hitachi Ltd. (Tokyo).

"Semiconductor device comprising plurality of diffusion layer electrodes with different conductivities and gate electrodes" was invented by Digh Hisamoto (Tokyo), Satoru Akiyama (Tokyo), Toshiyuki Mine (Tokyo), Noriyuki Lee (Tokyo), Gou Shinkai (Tokyo), Shinichi Saito (Tokyo) and Ryuta Tsuchiya (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region famed in a semiconductor layer formed on an insulating film famed in a semiconductor substrate and having a first extension portion extending in a first direction and a second extension portion ex...