US Patent Issued to Hitachi High-Tech on Oct. 7 for "Cleaning method of film layer in the plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,978, issued on Oct. 7, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Cleaning method of film layer in the plasma processing apparatus" was invented by Kazuhiro Ueda (Tokyo) and Kazuyuki Ikenaga (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cleaning method of a protective film for a plasma processing apparatus, the protective film being formed on a surface of a base material disposed inside a processing chamber of the plasma processing apparatus for processing a wafer using plasma, and containing a material having resistance to the plasma, and the cleaning method includes: (a) a step of preparing the base material including the film cont...