ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,575, issued on Oct. 14, was assigned to Hitachi High-Tech Corp. (Tokyo).
"Plasma processing apparatus" was invented by Hitoshi Tamura (Tokyo) and Norihiko Ikeda (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus including a processing chamber including therein a sample stage on which a substrate to be processed is placed; a magnetic field generating unit configured to generate a magnetic field inside the processing chamber; a microwave power source configured to generate microwave power; microwave power transfer units configured to transfer the microwave power; and a microwave three-dimensional circuit unit configure...