ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,572, issued on Oct. 14, was assigned to Hitachi High-Tech Corp. (Tokyo).
"Plasma processing apparatus" was invented by Isao Mori (Tokyo), Masaru Izawa (Tokyo), Naoki Yasui (Tokyo), Norihiko Ikeda (Tokyo) and Kazuya Yamada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing appa...