US Patent Issued to HITACHI HIGH-TECH on Oct. 14 for "Plasma processing apparatus, plasma processing method and plasma processing analysis method" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,442,770, issued on Oct. 14, was assigned to HITACHI HIGH-TECH Corp. (Tokyo).

"Plasma processing apparatus, plasma processing method and plasma processing analysis method" was invented by Ryoji Asakura (Tokyo), Kenji Tamaki (Tokyo), Daisuke Shiraishi (Tokyo), Akira Kagoshima (Tokyo) and Satomi Inoue (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters fo...