US Patent Issued to Hitachi High-Tech on June 17 for "Plasma processing apparatus and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,316, issued on June 17, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Takamasa Ichino (Tokyo) and Kohei Sato (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus or method that improves the yield of wafer processing, including a sample stand on which the wafer is mounted; plural heaters which are arranged in three or more regions in the radial direction including a circular region concentrically arranged around the center and ring-like regions surrounding the outer periphery on plural radii in the radial direction from the center toward the o...