US Patent Issued to Hitachi High-Tech on July 1 for "Plasma processing method and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,693, issued on July 1, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Plasma processing method and manufacturing method of semiconductor device" was invented by Yu Zhao (Tokyo) and Makoto Satake (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a plasma processing technology of applying isotropic dry etching to SiGe that does not allow etching amounts of respective SiGe layers to depend on a depth of a laminated structure in a laminated structure in which Si layers and the SiGe layers are stacked alternately and repeatedly. The present invention provides a plasma processing technology of repeating plasma oxidatio...