ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,665, issued on Jan. 28, was assigned to Hitachi High-Tech Corp. (Tokyo).
"Charged particle beam device" was invented by Akito Tanokuchi (Tokyo), Seiichiro Kanno (Tokyo) and Kei Shibayama (Ibaraki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A charged particle beam device suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. The charged particle beam device includes the electrostatic chuck mechanism; a stage which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiati...