US Patent Issued to Hitachi High-Tech on Jan. 13 for "Charged particle beam device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,423, issued on Jan. 13, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Charged particle beam device" was invented by Mai Yoshihara (Tokyo) and Wei Chean Tan (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Improved is the reliability of sample analysis performed using a charged particle beam apparatus.The charged particle beam apparatus includes region setting means for setting an irradiation region for irradiating a sample with an electron beam and an irradiation prohibited region for prohibiting the irradiation of the sample with the electron beam using a low-magnification image of the sample captured under low vacuum. In addition, the cha...