ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,157, issued on Feb. 11, was assigned to Hitachi High-Tech Corp. (Tokyo).
"Plasma processing apparatus and plasma processing method" was invented by Yuki Tanaka (Tokyo), Takamasa Ichino (Tokyo), Shintarou Nakatani (Tokyo) and Ryusuke Eijima (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus having an improved yield includes a metal base member having a disk shape or a cylindrical shape arranged inside a sample table; a refrigerant flow path arranged multiple times in a concentrical shape around a center of the base member; at least one temperature sensor; and a controller configured to detect a temperature of the base...