US Patent Issued to HITACHI HIGH-TECH on Dec. 9 for "Plasma processing apparatus and member of plasma processing chamber" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,348, issued on Dec. 9, was assigned to HITACHI HIGH-TECH Corp. (Tokyo).

"Plasma processing apparatus and member of plasma processing chamber" was invented by Kazuhiro Ueda (Tokyo), Kazuyuki Ikenaga (Tokyo), Tomoyuki Tamura (Tokyo) and Masahiro Sumiya (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material contai...