ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,347, issued on Dec. 9, was assigned to HITACHI HIGH-TECH Corp. (Tokyo).
"Plasma processing apparatus" was invented by Yusuke Takao (Tokyo), Ryoichi Isomura (Tokyo) and Kohei Sato (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a plasma processing apparatus having high safety whose running cost is reduced. The plasma processing apparatus includes: a vacuum container; a processing chamber disposed inside the vacuum container; and a processing gas line through which a processing gas is supplied into the processing chamber to form plasma in the processing chamber, in which the processing unit includes a plurality of pipes through which ...