US Patent Issued to Hitachi High-Tech on Dec. 9 for "Electron source, electron beam device, and method for manufacturing electron source" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,338, issued on Dec. 9, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Electron source, electron beam device, and method for manufacturing electron source" was invented by Toshiaki Kusunoki (Tokyo), Tomihiro Hashizume (Tokyo), Noriaki Arai (Tokyo) and Keigo Kasuya (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the ...