US Patent Issued to HITACHI HIGH-TECH ANALYSIS on Nov. 11 for "Semiconductor detector and method of manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,392, issued on Nov. 11, was assigned to HITACHI HIGH-TECH ANALYSIS Corp. (Tokyo).

"Semiconductor detector and method of manufacturing same" was invented by Kazuyuki Hozawa (Tokyo) and Takashi Takahama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An semiconductor detector includes an n-type semiconductor substrate, a detection electrode formed on a first surface of the semiconductor substrate, a plurality of drift electrodes formed to surround the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode, a radiation incidence window provided on a second surface of...