US Patent Issued to Hitachi Energy on Sept. 30 for "Insulated gate bipolar transistor including trench Schottky electrode" (Swiss, British Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,950, issued on Sept. 30, was assigned to Hitachi Energy Ltd (Zurich, Switzerland).

"Insulated gate bipolar transistor including trench Schottky electrode" was invented by Florin Udrea (Cambridge, Great Britain), Marina Antoniou (Cambridge, Great Britain), Neophytos Lophitis (Hinckley, Great Britain), Chiara Corvasce (Bergdietikon, Switzerland), Luca De-Michielis (Aarau, Switzerland), Umamaheswara Vemulapati (Windisch, Switzerland), Uwe Badstuebner (Zurich) and Munaf Rahimo (Gansbrunnen, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor includes a source electrode, a collector electrode, a source layer, ...