US Patent Issued to Hitachi Energy on Sept. 23 for "Reverse conducting power semiconductor device and method for manufacturing the same" (Swiss Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,349, issued on Sept. 23, was assigned to Hitachi Energy Ltd (Zurich).

"Reverse conducting power semiconductor device and method for manufacturing the same" was invented by Tobias Wikstroem (Egliswil, Switzerland) and Umamaheswara Vemulapati (Windisch, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A reverse conducting power semiconductor device includes a plurality of thyristor cells and a freewheeling diode are integrated in a semiconductor wafer. The freewheeling diode includes a diode anode layer, a diode anode electrode, a diode cathode layer, and a diode cathode electrode. The diode cathode layer includes diode cathode layer segmen...