US Patent Issued to HITACHI ENERGY on Oct. 21 for "Manufacturing method for power semiconductor device using low-energy electron radiation to produce silicon-enriched layer" (Swiss Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,150, issued on Oct. 21, was assigned to HITACHI ENERGY LTD (Zurich).

"Manufacturing method for power semiconductor device using low-energy electron radiation to produce silicon-enriched layer" was invented by Giovanni Alfieri (Moriken, Switzerland) and Gianpaolo Romano (Baden, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a power semiconductor device comprises providing a semiconductor body based on SiC, irradiating at least a first portion of a top side of the semiconductor body with low-energy electron radiation, and producing an electrical insulation layer at least in the at least one irradiated first portion."...