ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,749, issued on Nov. 4, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).
"Power semiconductor device" was invented by Jan Vobecky (Lenzburg, Switzerland) and Umamaheswara Vemulapati (Windisch, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a power semiconductor device comprising a semiconductor wafer having a first main side and second main side. The semiconductor wafer comprises parallel thyristor cells, which each comprises (a) a cathode electrode and gate electrode on the first main side; (b) a cathode layer comprising a cathode region of a first conductivity type, forming an ohmic contact with the cathode electrod...