US Patent Issued to HITACHI ENERGY on Jan. 27 for "Power semiconductor device and operating method" (Swiss, Czech Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,536, issued on Jan. 27, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).

"Power semiconductor device and operating method" was invented by Marco Bellini (Zurich, Switzerland), Jan Vobecky (Prague), Lars Knoll (Hagglingen, Switzerland), Gianpaolo Romano (Baden, Switzerland) and Giovanni Alfieri (Moriken, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The ...