US Patent Issued to Hitachi Energy on Feb. 18 for "Planar SiC MOSFET with retrograde implanted channel" (Swiss Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,675, issued on Feb. 18, was assigned to Hitachi Energy Ltd (Zurich, Switzerland).

"Planar SiC MOSFET with retrograde implanted channel" was invented by Marco Bellini (Schlieren, Switzerland) and Lars Knoll (Hagglingen, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide (SiC) planar transistor device includes a SiC semiconductor substrate of a first charge type, a SiC epitaxial layer of the first charge type formed at a top surface of the SiC semiconductor substrate, a source structure of the first charge type formed at a top surface of the SiC epitaxial layer, a drain structure of the first charge type formed at a bottom su...