US Patent Issued to Hitachi Energy on Dec. 9 for "Power module device with an embedded power semiconductor device" (Swiss Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,417, issued on Dec. 9, was assigned to Hitachi Energy Ltd (Zurich).

"Power module device with an embedded power semiconductor device" was invented by Slavo Kicin (Zurich, Switzerland), Chunlei Liu (Oberrohrdorf, Switzerland), Andrey Petrov (Zurich, Switzerland) and Gernot Riedel (Baden-Rutihof, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a power module device includes a base plate, an electrically insulating ceramic layer on the base plate, and an electrically insulating first insulating layer on the ceramic layer. The first insulating layer includes a prepreg material. An electrically conductive lead frame is dispos...