US Patent Issued to HITACHI ENERGY on Dec. 9 for "Bidirectional thyristor device with asymmetric characteristics" (Czech Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,565, issued on Dec. 9, was assigned to HITACHI ENERGY LTD (Zurich).

"Bidirectional thyristor device with asymmetric characteristics" was invented by Jan Vobecky (Prague).

According to the abstract* released by the U.S. Patent & Trademark Office: "Bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, is specified, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the fi...