US Patent Issued to HITACHI ENERGY on Dec. 30 for "Semiconductor device with a side surface having different partial regions" (Swiss Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,949, issued on Dec. 30, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).

"Semiconductor device with a side surface having different partial regions" was invented by Paul Commin (Zurich, Switzerland), Kranthi Kumar Akurati (Seon, Switzerland) and Jagoda Dobrzynska (Lenzburg, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with a semiconductor body is specified, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface. The semiconductor body comprises a first semiconductor layer of a first conductivity type and a second sem...