ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,928, issued on Dec. 30, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).
"Bidirectional thyristor device" was invented by Jan Vobecky (Prague) and Umamaheswara Vemulapati (Windisch, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode compris...