US Patent Issued to HITACHI ENERGY on Dec. 16 for "Power semiconductor device and a method for producing a power semiconductor device" (Swiss Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,668, issued on Dec. 16, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).

"Power semiconductor device and a method for producing a power semiconductor device" was invented by Marco Bellini (Zurich, Switzerland), Lars Knoll (Hagglingen, Switzerland), Gianpaolo Romano (Baden, Switzerland) and Yulieth Arango (Zurich, Switzerland).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device and method for production thereof is specified involving an electrode, a base layer of a first conductivity type provided on the electrode, at least one contact layer provided on the base layer, a gate contact provided on the base layer and on t...