US Patent Issued to Himax Imaging on June 24 for "CMOS RGB-IR sensor with quadruple-well stack structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,637, issued on June 24, was assigned to Himax Imaging Ltd. (Tainan, Taiwan).

"CMOS RGB-IR sensor with quadruple-well stack structure" was invented by Youngchul Sohn (Tainan, Taiwan) and Kihong Kim (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS image sensor includes: a substrate containing a potential well stack including: a first p-well, a first n-well disposed below the first p-well, a second p-well disposed below the first n-well, a second n-well disposed below the second p-well, and a third p-well disposed below the second n-well, wherein a first photodiode is formed at the junction between the first p-well and first n-well...