US Patent Issued to HENGDIAN GROUP DMEGC MAGNETICS on June 24 for "Doped phosphorus-sulfur iodide solid electrolyte, preparation method therefor, and use thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,153, issued on June 24, was assigned to HENGDIAN GROUP DMEGC MAGNETICS Co. LTD (Jinhua, China).

"Doped phosphorus-sulfur iodide solid electrolyte, preparation method therefor, and use thereof" was invented by Guoguang Wang (Jinhua, China), Cheng Shi (Jinhua, China), Zhanzhou Wang (Jinhua, China), Yisheng Jiang (Jinhua, China), Yang Xia (Jinhua, China) and Jun Zhang (Jinhua, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A doped phosphorus-sulfur iodide solid electrolyte, a preparation method therefor, and use thereof. The chemical formula of said solid electrolyte is Li6-xMxP1-xS5I, in which 0greater thanxgreater than0.8, and M is tungsten and...