US Patent Issued to Helios Bioelectronics on Sept. 23 for "Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,445, issued on Sept. 23, was assigned to Helios Bioelectronics Inc. (Zhubei, Taiwan).

"Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device" was invented by Cheng-Che Lee (Zhubei, Taiwan) and Lin-Chien Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor sensing device. The semiconductor sensing device includes a substrate having a sensing region. The sensing region includes an active feature. The active feature includes an anchor portion, an elevated portion, and a nanowire portion. The anchor portion is on a top surface o...