US Patent Issued to HEIQ MATERIALS on Nov. 18 for "Method for making porous graphene membranes and membranes produced using the method" (South Korean, Australian, Swiss Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,472,472, issued on Nov. 18, was assigned to HEIQ MATERIALS AG (Schlieren, Switzerland).

"Method for making porous graphene membranes and membranes produced using the method" was invented by Kyoungjun Choi (Thalwil, Switzerland), Hyung Gyu Park (Seoul, South Korea) and Murray Height (Newtown, Australia).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially c...