US Patent Issued to Hefei Xinsheng Optoelectronics Technology, BOE Technology Group on April 8 for "Gate driving circuit and manufacturing method therefor, array substrate, and display device" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,094, issued on April 8, was assigned to Hefei Xinsheng Optoelectronics Technology Co. Ltd. (Anhui, China) and BOE Technology Group Co. Ltd. (Beijing).

"Gate driving circuit and manufacturing method therefor, array substrate, and display device" was invented by Tongshang Su (Beijing), Jun Cheng (Beijing), Bin Zhou (Beijing), Ce Zhao (Beijing), Qinghe Wang (Beijing), Jun Wang (Beijing) and Liangchen Yan (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a gate driving circuit. The gate driving circuit includes a plurality of first transistors; wherein at least one first target transistor of the plurality of first transistors includes ...